The NEW FT/IR-4000 Series FT-IR Spectrometers provide capabilities and routine analysis to research...
The NEW FT/IR-6000 Series FT-IR Spectrometers provide capabilities and routine analysis to research...
The VIR-100/200/300 series are compact, lightweight, flexible FT-IR systems. The collimated entrance and exit ports make it an ideal instrument for a wide range of applications...
The JASCO Model RFT-6000 FT-Raman accessory is designed for quick, non-destructive FT-Raman analysis...
FTIR Application Notes
Submillimeter wave exclusive Fourier transform spectrophotometer
The JASCO FT/IR-4000 and FT/IR-6000 Series redefine the application of this powerful, easy-to-use technique. Each compact model offers reliable operation with the highest signal-to-noise ratio in the industry. All instruments feature a highly stable, corner-cube interferometer and AccuTrac™ DSP technology enabling rapid and accurate tracking of mirror position and velocity for optimum signal-to-noise performance.
Our FT-IR Series includes the powerful and intuitive integrated search software solution, the KnowItAll® database Search software package from Sadtler .
Corner cube mirrors
Corner cube mirrors automatically correct for any light path deviation, providing excellent optical stability at all times.
Excellent S/N ratio
Featuring a highly stable interferometer and DSP technology enabling rapid and accurate tracking of mirror position and velocity for optimum signal-to-noise performance.
Highly sensitive detector
A highly sensitive and stable DLATGS detector is standard for all instrument models. The DLATGS detector element is temperature-controlled using the Peltier effect.
The working range can be extended to cover visible to Far-IR applications by switching various optical components.
A specially designed vibration-proof mounting of the optical bench completely eliminates interference from external vibrations.
For laboratories compliant with GxP regulations, an instrument validation routine is provided as standard to verify instrument performance compliant with ASTM, EP, and JP procedures.
All models include a fully sealed and dessicated interferometer chamber. In addition, an integrated purge for the optical system is included as standard.
JASCO offers several different infrared microscope models which can be easily interfaced to any FT/IR-4000 or FT/IR-6000 instrument.
Other System Attributes
- Compact size
- Easy to use
- Maintenance free optics
- High Performance
The Start Button on the instrument allows immediate start of sample measurements with a single push of the button.
A sequence of operations, including data processing, can be defined in the instrument control software, the operational sequence initiated by a simple press of the Start button. No fumbling for the mouse or multiple clicks to obtain a final FT-IR spectrum!
IQ Accessory Recognition
Automatic recognition of the sampling accessory inserted into the sample compartment.
The Rapid Scan function is optional for the FT/IR-4600, FT/IR-4700, FT/IR-6600, and FT/IR-6700 and provided as a standard feature for the FT/IR-6800.
The Step Scan function is optional for the FT/IR-6000 Series. Using the Step Scan technique it is possible to monitor the progress of very fast and reproducible events.
Spectral Search Program
The Sadtler search software package, “KnowItAll™ Informatics System, JASCO Edition” with a library of 10,000 chemical and polymer spectra is standard.
The FT/IR-6000 Series can be upgraded to a full vacuum system.
Evaluation of a Si Wafer Surface Using a 65-Degree Incident Angle ATR
Measuring the surface of a Si semiconductor substrate or other materials is required knowledge of the surface or contamination condition of thermally oxidized films that function as an insulating film for the semiconductor. For the surface analysis, such techniques as XPS (X-ray photoelectron spectroscopy, ESCA) and SIMS (secondary ion mass spectrometry) are popularly employed, and such methods provide elemental information on the sample surfaces. On the other hand, infrared spectroscopy (IR) easily obtains information on the molecular bonding condition, which cannot be analyzed by XPS or SIMS in a non-destructive manner. For the surface analysis using mid-IR, the ATR method is popularly employed. For the 45-degree incident ATR, the most common configuration, measurement of samples of Si wafers with a high refractive index is difficult, since this configuration does not satisfy the total reflection conditions required for ATR measurements. With the single-reflection 65-degree incident ATR recently developed (Figure 1), a Ge crystal with a high refractive index (n = 4.0) is used for the prism, and the incident angle of light to the sample is set at 65 degrees, thereby obtaining information on the topmost surface and providing measurements of samples with a high refractive index, such as Si (refractive index=approx. 3.4) and carbon black filled rubbers whose refractive index can be 2.8 or higher. (See Table 1: JASCO FT/IR application data 280-AT-0003)
Fig. 1: Single Reflection 65-degree
Incident ATR (ATR PRO650G)
|Incident Angle||Prism||Lower Measurement Limit at Low Wavenumber Side||n1||n2||Penetration Depth (For 1000 cm-1, n=1.5)|
|65º||Ge||- 700 cm-1||4.0||3.6||0.66 ?m|
|45º||Ge||- 700 cm-1||4.0||2.8||0.66 ?m|
n1 : Refractive index of prism
n2 :Upper limit of measurable refractive index of sample (Upper limit that satisfies the total reflection conditions)
We recently executed measurements of a natural oxide film on Si wafer surfaces using a single reflection 65- degree incident ATR as an application example of the new ATR accessory.
Features of Single Reflection 65-degree Incident ATR (ATR PRO650G)
The ATR PRO650G (Figure 1) features a slip clutch pressure clamp to prevent damage to the sample or prism during application of pressure to ensure proper contact of the sample with the ATR crystal. Furthermore, a large sampling surface is available on the top panel, enabling measurements of the center portion of a sample, even as large as a six-inch Si wafer. In addition, since an optional polarizer and analyzer can be added to the light path, analysis of the molecular orientation of the sample surface can also be obtained.
Jasco FT/IR-4000 Series
System: FT/IR-4100 Measurement Method: ATR method (Reflection: Single)
Resolution: 4 cm-1 Detector: DLATGS
Aperture: 3.5 mm Accumulations: 128 times
Accessory: ATR PRO650G (Prism: Ge)
Results and Discussion
Measurement was performed of a Si wafer surface on which a natural oxide film was present. For comparison purposes, the measurement was made using a 45-degree incident ATR and the transmission method. Figure 2 displays the overlaid spectra obtained of the measurement results using the 45-degree and 65-degree incident ATR accessories, and Figure 3 shows the spectra obtained by normalizing the measurement results of the transmission method and comparing to the spectrum of the 65-degree ATR. From Figure 2, it can be seen that the spectrum of the 45-degree incident ATR does not satisfy the total refraction condition required for the ATR measurement, and the spectrum presents significant distortion, making it difficult to evaluate the surface condition. On the other hand, with the 65-degree incident ATR, since the spectrum satisfies the total refraction condition, the spectrum does not present any distortion and the base line remains flat. From Figure 3, the absorption peak in the vicinity of 1235 cm-1, which can be attributed to the natural oxide film, is noted, and a slight amount of organic contamination of the surface is present based on the peaks from 3000 to 2800 cm-1, which can be attributed to C-H adsorptions. Also, the results obtained by the transmission method reveal absorptions in the vicinity of 1100 cm-1, which can be attributed to the Si-O in the Si wafer substrate, but the absorption peak at around 1235 cm-1 cannot be positively determined. These results demonstrate that using the 65-degree incident ATR enabled acquisition of information
Fig. 2: Oxide Film Spectrum on Si Wafer (Offset Indication)
Fig. 3: Oxide Film Spectra on Si Wafer (Standardized; Offset Indication)
Using the single refraction 65-degree incident ATR enables evaluation of the surface condition of substrates such as Si wafers with a high refractive index in a nondestructive manner. In the future, applications for the qualitative and quantitative evaluation of the adhesion condition of organic substances on the Si wafer surface will be evaluated. The quantitative evaluation of oxide films based on the peak height and area at around 1235 cm-1 and the estimation of SiO and SiO2 percentages in the oxide film will be examined.
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